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| NTE396 Silicon NPN Transistor Power Amplifier & High Speed Switch (Compl to NTE397) Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.7mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.6mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Sustaining Voltage VCEO(sus) IC = 50mA, IB = 0, Note 1 Collector Cutoff Current ICEO ICEX ICBO Emitter Cutoff Current ON Characteristics (Note 1) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage hFE VCE(sat) VBE(sat) IC = 2mA, VCE = 10V IC = 20mA, VCE = 10V IC = 50mA, IB = 4mA IC = 50mA, IB = 4mA 30 40 - - - - - - - 160 0.5 1.3 V V IEBO VCE = 300V, IB = 0 VCE = 450V, VBE = 1.5V VCB = 360V, IE = 0 VEB = 6V, IC = 0 350 - - - - - - - - - - 20 500 20 20 V A A A A Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test; Pulse Width 300s, Duty Cycle 2%. CAUTION: The sustaining voltage must not be measured on a curve tracer. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Small-Signal Characteristics Current Gain-Bandwidth Product Output Capacitance Input Capacitance Small-Signal Current Gain Real Part of Input Impedance fT Cobo Cibo hfe Re(hie) IC = 10mA, VCE = 10V, f = 50MHz VCB = 10V, IE = 0, f = 1MHz VCB = 5V, IC = 0, f = 1MHz IC = 5mA, VCE = 10V, f = 1MHz VCE = 10V, IC = 5mA, f = 1MHz 15 - - 25 - - - - - - - 10 75 - 300 MHz pF pF Symbol Test Conditions Min Typ Max Unit .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793) |
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